Каталог библиотеки БГТУ

1. Базы данных
2. Статьи
3. Автор
4. Efremov, A. M.

Статьи. Автор - Efremov, A. M.

• Gas-phase parameters and silicon etching kinetics in C[6]F[12]O + О[2] plasma
  Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B.
  
  Gas-phase parameters and silicon etching kinetics in C[6]F[12]O + О[2] plasma, A. M. Efremov, V. B. Betelin, Kwang-Ho Kwon 3 рис., 1 табл. // Известия вузов. Химия и химическая технология .- 2022 .- Т. 65, вып. 4. - С. 30-38 .-
• On the effect of oxygen on plasma chemical kinetics in CF[4] + O[2] and C[4]F[8] + O[2] gas mixtures
  Efremov, A. M., Kwang-Ho Kwon, Bashmakova, D. E.
  
  On the effect of oxygen on plasma chemical kinetics in CF[4] + O[2] and C[4]F[8] + O[2] gas mixtures, A. M. Efremov, D. E. Bashmakova, Kwang-Ho Kwon 2 рис., 2 табл. // Известия вузов. Химия и химическая технология .- 2024 .- Т. 67, вып. 1. - С. 51-59 .-
• Concerning effects of inert carrier gas on densities of active species and ZrO[2] etching kinetics in chlorine plasma
  Efremov, A. M., Kwang-Ho Kwon, Smirnov, S. A., Betelin, V. B.
  
  Concerning effects of inert carrier gas on densities of active species and ZrO[2] etching kinetics in chlorine plasma, A. M. Efremov, S. A. Smirnov, V. B. Betelin, Kwang-Ho Kwon 5 рис. // Известия вузов. Химия и химическая технология .- 2024 .- Т. 67, вып. 11. - С. 40-54 .-
• Features of plasma composition and fluorine atom kinetics in CHF[3] + O[2]gas mixture
  Efremov, A. M., Kwang-Ho Kwon, Bashmakova, D. E.
  
  Features of plasma composition and fluorine atom kinetics in CHF[3] + O[2]gas mixture, A. M. Efremov, D. E. Bashmakova, Kwang-Ho Kwon 2 рис., 2 табл. // Известия вузов. Химия и химическая технология .- 2023 .- Т. 66, вып. 1. - С. 48-55 .-
• Plasma parameters and composition in CF[4]/O[2]/Ar gas mixture
  Efremov, A. M., Kwon, K. -H.
  
  Plasma parameters and composition in CF[4]/O[2]/Ar gas mixture, [[Текст]], A. M. Efremov, K.-H. Kwon 2 рис. // Известия вузов. Химия и химическая технология .- 2017 .- Т. 60, вып. 1. - С. 50-55 .-
• Plasma parameters, densities of active species and etching kinetics in C[4]F[8]+Ar gas mixture
  Efremov, A. M., Murin, D. B., Kwon, K. H.
  
  Plasma parameters, densities of active species and etching kinetics in C[4]F[8]+Ar gas mixture, [[Текст]], A. M. Efremov, D. B. Murin, K. H. Kwon 4 рис. // Известия вузов. Химия и химическая технология .- 2019 .- Т. 62, вып. 2. - С. 31-37 .-
• On the comparison of reactive-ion etching mechanisms for SiO[2] in Fluorine- and chlorine-containing plasmas
  Efremov, A. M., Kwang-Ho Kwon, Smirnov, S. A., Betelin, V. B.
  
  On the comparison of reactive-ion etching mechanisms for SiO[2] in Fluorine- and chlorine-containing plasmas, A. M. Efremov, S. A. Smirnov, V. B. Betelin, Kwang-Ho Kwon 3 рис. // Известия вузов. Химия и химическая технология .- 2023 .- Т. 66, вып. 8. - С. 54-62 .-
• Plasma parameters and densities of active species in mixtures of fluorocarbon gases with argon and оxygen
  Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B., Mednikov, K. A.
  
  Plasma parameters and densities of active species in mixtures of fluorocarbon gases with argon and оxygen, A. M. Efremov, V. B. Betelin, K. A. Mednikov, Kwang-Ho Kwon 3 рис., 1 табл. // Известия вузов. Химия и химическая технология .- 2021 .- Т. 64, вып. 7. - С. 46-53 .-
• Gas-phase parameters and reactive-ion etching regimes for Si and SiO[2] in binary Ar+CF[4]/C[4]F[8] mixtures
  Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B., Mednikov, K. A.
  
  Gas-phase parameters and reactive-ion etching regimes for Si and SiO[2] in binary Ar+CF[4]/C[4]F[8] mixtures, A. M. Efremov, V. B. Betelin, K. A. Mednikov, Kwang-Ho Kwon 3 рис. // Известия вузов. Химия и химическая технология .- 2021 .- Т. 64, вып. 6. - С. 25-34 .-
• Plasma composition and SiO[2] etching kinetics in CF[4]/C[4]F[8]/Ar/He mixture: effects of CF[4]/C[4]F[8] mixing ratio and bias power
  Efremov, A. M., Kwang-Ho Kwon
  
  Plasma composition and SiO[2] etching kinetics in CF[4]/C[4]F[8]/Ar/He mixture: effects of CF[4]/C[4]F[8] mixing ratio and bias power, A. M. Efremov, Kwang-Ho Kwon 2 рис. // Известия вузов. Химия и химическая технология .- 2022 .- Т. 65, вып. 10. - С. 47-53 .-
• Plasma parameters and kinetics of active species in HBr + Cl[2] + O[2] gas mixture
  Efremov, A. M., Betelin, V. B., Kwon, K. -H., Snegirev, D. G.
  
  Plasma parameters and kinetics of active species in HBr + Cl[2] + O[2] gas mixture, [[Текст]], A. M. Efremov [и др.] 3 рис. // Известия вузов. Химия и химическая технология .- 2019 .- Т. 62, вып. 7. - С. 72-79 .-
• Features of SiO[2] reactive-ion etching kinetics in CF[4]+ Ar + O[2] and C[4]F[8] + Ar + O[2] gas mixtures
  Efremov, A. M., Kwang-Ho Kwon, Sobolev, A. M.
  
  Features of SiO[2] reactive-ion etching kinetics in CF[4]+ Ar + O[2] and C[4]F[8] + Ar + O[2] gas mixtures, A. M. Efremov, A. M. Sobolev, Kwang-Ho Kwon 3 рис., 1 табл. // Известия вузов. Химия и химическая технология .- 2020 .- Т. 63, вып. 9. - С. 21-27 .-
• Plasma parameters and SiO[2] etching kinetics in C[4]F[8] + Ar + O[2] gas mixture
  Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B.
  
  Plasma parameters and SiO[2] etching kinetics in C[4]F[8] + Ar + O[2] gas mixture, A. M. Efremov, V. B. Betelin, Kwang-Ho Kwon 2 рис., 2 табл. // Известия вузов. Химия и химическая технология .- 2020 .- Т. 63, вып. 6. - С. 37-43 .-
• On the comparison of reactive-ion etching mechanisms for SiO[2] and Si[3]N[4] in HBr + Ar plasma
  Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B.
  
  On the comparison of reactive-ion etching mechanisms for SiO[2] and Si[3]N[4] in HBr + Ar plasma, A. M. Efremov, V. B. Betelin, Kwang-Ho Kwon 2 рис. // Известия вузов. Химия и химическая технология .- 2023 .- Т. 66, вып. 6. - С. 37-45 .-
• Plasma parameters and active species kinetics in Cl[2]+BCl[3]+Ar gas mixture
  Efremov, A. M., Kwang-Ho Kwon, Smirnov, S. A., Betelin, V. B.
  
  Plasma parameters and active species kinetics in Cl[2]+BCl[3]+Ar gas mixture, A. M. Efremov, S. A. Smirnov, V. B. Betelin, Kwang-Ho Kwon 3 рис. // Известия вузов. Химия и химическая технология .- 2022 .- Т. 65, вып. 3. - С. 14-21 .-
• On mechanisms of oxygen influence on gas-phase parameters and silicon reactive-ion etching kinetics in HBr+Cl[2]+O[2] plasma
  Efremov, A. M., Rybkin, V. V., Betelin, V. B., Kwang-Ho Kwon
  
  On mechanisms of oxygen influence on gas-phase parameters and silicon reactive-ion etching kinetics in HBr+Cl[2]+O[2] plasma, [[Текст]], A. M. Efremov [и др.] 4 рис. // Известия вузов. Химия и химическая технология .- 2019 .- Т. 62, вып. 10. - С. 76-83 .-