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Gas-phase parameters and silicon etching kinetics in C[6]F[12]O + О[2] plasma
Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B.
Gas-phase parameters and silicon etching kinetics in C[6]F[12]O + О[2] plasma, A. M. Efremov, V. B. Betelin, Kwang-Ho Kwon
3 рис., 1 табл.
// Известия вузов. Химия и химическая технология .-
2022 .-
Т. 65, вып. 4. - С. 30-38 .-
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Concerning effects of inert carrier gas on densities of active species and ZrO[2] etching kinetics in chlorine plasma
Efremov, A. M., Kwang-Ho Kwon, Smirnov, S. A., Betelin, V. B.
Concerning effects of inert carrier gas on densities of active species and ZrO[2] etching kinetics in chlorine plasma, A. M. Efremov, S. A. Smirnov, V. B. Betelin, Kwang-Ho Kwon
5 рис.
// Известия вузов. Химия и химическая технология .-
2024 .-
Т. 67, вып. 11. - С. 40-54 .-
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On the comparison of reactive-ion etching mechanisms for SiO[2] in Fluorine- and chlorine-containing plasmas
Efremov, A. M., Kwang-Ho Kwon, Smirnov, S. A., Betelin, V. B.
On the comparison of reactive-ion etching mechanisms for SiO[2] in Fluorine- and chlorine-containing plasmas, A. M. Efremov, S. A. Smirnov, V. B. Betelin, Kwang-Ho Kwon
3 рис.
// Известия вузов. Химия и химическая технология .-
2023 .-
Т. 66, вып. 8. - С. 54-62 .-
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Plasma parameters and densities of active species in mixtures of fluorocarbon gases with argon and оxygen
Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B., Mednikov, K. A.
Plasma parameters and densities of active species in mixtures of fluorocarbon gases with argon and оxygen, A. M. Efremov, V. B. Betelin, K. A. Mednikov, Kwang-Ho Kwon
3 рис., 1 табл.
// Известия вузов. Химия и химическая технология .-
2021 .-
Т. 64, вып. 7. - С. 46-53 .-
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Gas-phase parameters and reactive-ion etching regimes for Si and SiO[2] in binary Ar+CF[4]/C[4]F[8] mixtures
Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B., Mednikov, K. A.
Gas-phase parameters and reactive-ion etching regimes for Si and SiO[2] in binary Ar+CF[4]/C[4]F[8] mixtures, A. M. Efremov, V. B. Betelin, K. A. Mednikov, Kwang-Ho Kwon
3 рис.
// Известия вузов. Химия и химическая технология .-
2021 .-
Т. 64, вып. 6. - С. 25-34 .-
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Plasma parameters and kinetics of active species in HBr + Cl[2] + O[2] gas mixture
Efremov, A. M., Betelin, V. B., Kwon, K. -H., Snegirev, D. G.
Plasma parameters and kinetics of active species in HBr + Cl[2] + O[2] gas mixture, [[Текст]], A. M. Efremov [и др.]
3 рис.
// Известия вузов. Химия и химическая технология .-
2019 .-
Т. 62, вып. 7. - С. 72-79 .-
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Plasma parameters and SiO[2] etching kinetics in C[4]F[8] + Ar + O[2] gas mixture
Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B.
Plasma parameters and SiO[2] etching kinetics in C[4]F[8] + Ar + O[2] gas mixture, A. M. Efremov, V. B. Betelin, Kwang-Ho Kwon
2 рис., 2 табл.
// Известия вузов. Химия и химическая технология .-
2020 .-
Т. 63, вып. 6. - С. 37-43 .-
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On the comparison of reactive-ion etching mechanisms for SiO[2] and Si[3]N[4] in HBr + Ar plasma
Efremov, A. M., Kwang-Ho Kwon, Betelin, V. B.
On the comparison of reactive-ion etching mechanisms for SiO[2] and Si[3]N[4] in HBr + Ar plasma, A. M. Efremov, V. B. Betelin, Kwang-Ho Kwon
2 рис.
// Известия вузов. Химия и химическая технология .-
2023 .-
Т. 66, вып. 6. - С. 37-45 .-
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Plasma parameters and active species kinetics in Cl[2]+BCl[3]+Ar gas mixture
Efremov, A. M., Kwang-Ho Kwon, Smirnov, S. A., Betelin, V. B.
Plasma parameters and active species kinetics in Cl[2]+BCl[3]+Ar gas mixture, A. M. Efremov, S. A. Smirnov, V. B. Betelin, Kwang-Ho Kwon
3 рис.
// Известия вузов. Химия и химическая технология .-
2022 .-
Т. 65, вып. 3. - С. 14-21 .-
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On mechanisms of oxygen influence on gas-phase parameters and silicon reactive-ion etching kinetics in HBr+Cl[2]+O[2] plasma
Efremov, A. M., Rybkin, V. V., Betelin, V. B., Kwang-Ho Kwon
On mechanisms of oxygen influence on gas-phase parameters and silicon reactive-ion etching kinetics in HBr+Cl[2]+O[2] plasma, [[Текст]], A. M. Efremov [и др.]
4 рис.
// Известия вузов. Химия и химическая технология .-
2019 .-
Т. 62, вып. 10. - С. 76-83 .-
