Plasma parametrs and silicon etching kinetics in CF[4] + C[4]F[8] + O[2] mixture: effect of CF[4]/C[4]F[8] mixing ratio
Efremov, А. М., Kwang-Ho Kwon, Bobylev, A. V.
Plasma parametrs and silicon etching kinetics in CF[4] + C[4]F[8] + O[2] mixture: effect of CF[4]/C[4]F[8] mixing ratio, A. M. Efremov, A. V. Bobylev, Kwang-Ho Kwon
3 рис., 2 табл.
// Известия вузов. Химия и химическая технология .-
2024 .-
Т. 67, вып. 6. - С. 29-37 .-
