On mechanisms of oxygen influence on gas-phase parameters and silicon reactive-ion etching kinetics in HBr+Cl[2]+O[2] plasma
Efremov, A. M., Rybkin, V. V., Betelin, V. B., Kwang-Ho Kwon
On mechanisms of oxygen influence on gas-phase parameters and silicon reactive-ion etching kinetics in HBr+Cl[2]+O[2] plasma, [[Текст]], A. M. Efremov [и др.]
4 рис.
// Известия вузов. Химия и химическая технология .-
2019 .-
Т. 62, вып. 10. - С. 76-83 .-